Publications
Found 631 results
Author Title Type [ Year
Filters: First Letter Of Last Name is H [Clear All Filters]
"Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
, "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
, "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
, "iJMR Abstracts", MRS BULLETIN, 1998.
, "Improvement of GaN-based laser diode facets by FIB polishing", Electronics Letters, vol. 34, no. 13: IET, pp. 1315–1316, 1998.
, "Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants", MRS Online Proceedings Library Archive, vol. 535: Cambridge University Press, 1998.
, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
, "Near Field Spectroscopy of InGaN Single and Multiple Quantum Well Structures", APS March Meeting Abstracts, 1998.
, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
, "Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings", Device Research Conference Digest, 1999 57th Annual: IEEE, pp. 198–199, 1999.
, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
, "Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings", Electronics Letters, vol. 35, no. 18: IET, pp. 1559–1560, 1999.
, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
, "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
,