Publications

Found 252 results
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2006
Armstrong, A., C. Poblenz, DS. Green, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmueller, C. S. Gallinat, J. S. Speck, and W. J. Schaff, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
Gallinat, C. S., G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
Ghosh, S., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1441–1445, 2006.
Ghosh, S., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1441–1445, 2006.
Koblmüller, G., CS. Gallinat, S. Bernardis, JS. Speck, GD. Chern, ED. Readinger, H. Shen, and M. Wraback, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
Misra, P., U. Behn, O. Brandt, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy", Applied physics letters, vol. 88, no. 16: AIP, pp. 161920, 2006.
Romanov, AE., TJ. Baker, S. Nakamura, JS. Speck, and ERATO/JST. U. C. S. B. Group, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Field, M., and C. Gallinat, "Fabrication of a Ferromagnetic Semiconductor Spin Bipolar Transistor", APS Meeting Abstracts, 2005.
Armstrong, A., AR. Arehart, D. Green, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon", Journal of Applied physics, vol. 98, no. 5: AIP, pp. 053704, 2005.
Garrett, GA., H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
Armstrong, A., A. Arehart, D. Green, JS. Speck, UK. Mishra, and SA. Ringel, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
Akopian, N., G. Bahir, D. Gershoni, MD. Craven, JS. Speck, and SP. DenBaars, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
Ghosh, S., P. Misra, HT. Grahn, B. Imer, S. Nakamura, SP. DenBaars, Speck, and JS, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
Ghosh, S., P. Misra, HT. Grahn, B. Imer, S. Nakamura, SP. DenBaars, Speck, and JS, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
Rudin, S., GA. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
Grundmann, MJ., JS. Speck, and UK. Mishra, "Tunnel junctions in GaN/AlN for optoelectronic applications", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 23–24, 2005.
2004
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Green, DS., UK. Mishra, and JS. Speck, "Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 95, no. 12: AIP, pp. 8456–8462, 2004.
Armstrong, A., D. Green, AR. Arehart, UK. Mishra, JS. Speck, and SA. Ringel, "Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN: C and their Influence on Yellow Luminescence", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Gao, Y., MD. Craven, JS. Speck, SP. Den Baars, and EL. Hu, "Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride", Applied physics letters, vol. 84, no. 17: AIP, pp. 3322–3324, 2004.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Erratum: Nonpolar In x Ga 1- x N/G a N (1 1\= 0 0) multiple quantum wells grown on γ- L i A l O 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306 (R)(2003)]", Physical Review B, vol. 69, no. 12: APS, pp. 129902, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.

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