Publications

Found 252 results
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2015
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
2014
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Marcinkevičius, S., K. Gelžinyt\.e, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
Giddings, AD., TJ. Prosa, A. Merkulov, FA. Stevie, HG. Francois-Saint-Cyr, NG. Young, JS. Speck, and DJ. Larson, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
Woodward, N., R. Enck, C. S. Gallinat, L. E. Rodak, G. D. Metcalfe, J. S. Speck, H. Shen, and M. Wraback, "Evidence of lateral electric fields in c-plane III-V nitrides via terahertz emission", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 686–689, 2014.
Feneberg, M., C. Lidig, K. Lange, R. Goldhahn, M. D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
von Wenckstern, H., D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, JS. Speck, and others, "Schottky contacts to In ${$sub 2$}$ O ${$sub 3$}$", APL Materials, vol. 2, no. 4, 2014.
von Wenckstern, H., D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, and J. S. Speck, "Schottky contacts to In2O3", APL Materials, vol. 2, no. 4: AIP, pp. 046104, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, and Z. Galazka, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
2013
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
2012
Choi, P-P., O. Cojocaru-Mirédin, D. Abou-Ras, R. Caballero, D. Raabe, V. S. Smentkowski, C. Gyung Park, G. Ho Gu, B. Mazumder, M. Hoi Wong, et al., "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.
Garrett, G. A., P. Rotella, H. Shen, M. Wraback, D. A. Haeger, R. B. Chung, N. Pfaff, E. C. Young, S. P. DenBaars, J. S. Speck, et al., "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
Metcalfe, G. D., C. S. Gallinat, H. Shen, M. Wraback, S. Wienecke, E. C. Young, and J. S. Speck, "Effects of strain relaxation on the photoluminescence of semipolar InGaN", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
Hodges, C., N. Killat, SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, D. Wolverson, and M. Kuball, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
Pan, C-C., T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.

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