Publications
Found 252 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is G [Clear All Filters]
, "Fracture Toughness of Chemically Vapor-Deposited Diamond", Journal of the American Ceramic Society, vol. 74, no. 12: Wiley Online Library, pp. 3148–3150, 1991.
, "Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films", Journal of Applied Physics, vol. 74, no. 10: AIP, pp. 6012–6019, 1993.
, "Energy Release Due to Domain Formation in the Strained Epitaxy of Multivariant Films", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
, "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs", Journal of applied physics, vol. 73, no. 7: AIP, pp. 3276–3283, 1993.
, "Observation of arsenic precipitates in GaInAs grown at low temperature on InP", Applied physics letters, vol. 62, no. 18: AIP, pp. 2209–2211, 1993.
, "Observation of impurity effects on the nucleation of arsenic precipitates in GaAs", Applied physics letters, vol. 62, no. 2: AIP, pp. 169–171, 1993.
, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.
, "???????: ????∑??∑????∑???????= Inorganic materials 4 (271), 633-641, 1997-11-01", J. Eur. Ceram. Soc, vol. 12, pp. 123, 1993.
, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
, "The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 37, pp. 4460, 1998.
, "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied physics letters, vol. 73, no. 21: AIP, pp. 3090–3092, 1998.
, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
, "Substrate reactivity and" controlled contamination" in MOCVD grown gallium nitride on sapphire.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 216: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U188–U188, 1998.
, "Substrate Reactivity and ìControlled Contaminationî in Metalorganic Chemical Vapor Deposition of GaN on Sapphire", Japanese journal of applied physics, vol. 37, no. 9R: IOP Publishing, pp. 4695, 1998.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.