Publications

Found 333 results
Author Title Type [ Year(Desc)]
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2000
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
Green, DS., S. Heikman, B. Heying, PR. Tavernier, JS. Speck, DR. Clarke, SP. Den Baars, and UK. Mishra, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
Heying, B., I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, D. S Baars, U. Mishra, and JS. Speck, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
2001
A Andrews, M., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
Romanov, AE., GE. Beltz, WT. Fischer, PM. Petroff, and JS. Speck, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Speck, J. S., P. M. Petroff, and G. E. Beltz, Periodic Lattices of Interacting Self-Assembled Quantum Dots: DTIC Document, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
2002
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
Okuno, K., Y. Saito, S. Boyama, N. Nakada, S. Nitta, R. George Tohmon, Y. Ushida, N. Shibata, N. A. Fichtenbaum, C. J. Neufeld, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2007, 574-575, 2007-09-19", J. Appl. Phys, vol. 92, pp. 5714, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.

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