Publications

Found 647 results
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2007
Wong, M. Hoi, S. Rajan, RM. Chu, T. Palacios, C-S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, and U. K. Mishra, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
Rajan, S., A. Chini, M. Hoi Wong, J. S. Speck, and U. K. Mishra, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
Rajan, S., E. Hsieh, M. Hoi Wong, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.
Keller, S., NA. Fichtenbaum, C. Schaake, CJ. Neufeld, A. David, E. Matioli, Y. Wu, SP. DenBaars, JS. Speck, C. Weisbuch, et al., "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
Keller, S., NA. Fichtenbaum, C. Schaake, CJ. Neufeld, A. David, E. Matioli, Y. Wu, SP. DenBaars, JS. Speck, C. Weisbuch, et al., "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
Hashimoto, T., M. Saito, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura, "Seeded growth of GaN by the basic ammonothermal method", Journal of crystal growth, vol. 305, no. 2: Elsevier, pp. 311–316, 2007.
Weisbuch, C. C. A., A. J. F. David, J. S. Speck, and S. P. DenBaars, Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
Chern, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, and J. Speck, "Terahertz Emission from Indium Nitride Multiple Quantum Wells", Optical Terahertz Science and Technology: Optical Society of America, pp. MA3, 2007.
Wu, Y., CG. Moe, S. Keller, SP. DenBaars, and JS. Speck, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
2006
Moe, C. G., Y. Wu, J. Piprek, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
Baker, T. J., B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on sapphire substrates", Japanese Journal of Applied Physics, vol. 45, no. 2L: IOP Publishing, pp. L154, 2006.
Chern, G., E. Readinger, H. Shen, M. Wraback, C. Gallinat, G. Koblmueller, and J. Speck, "Comparison of terahertz emission from N-face and In-face indium nitride thin films", APS Meeting Abstracts, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Keller, S., N. Fichtenbaum, F. Wu, G. Lee, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
Waki, I., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
Chern, G. D., E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
McLaurin, M., TE. Mates, F. Wu, and JS. Speck, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.

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