Publications

Found 2112 results
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2001
Mathis, SK., KHA. Lau, AM. Andrews, EM. Hall, G. Almuneau, EL. Hu, and JS. Speck, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
Smith, KV., ET. Yu, CR. Elsass, B. Heying, and JS. Speck, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
Smith, KV., ET. Yu, CR. Elsass, B. Heying, and JS. Speck, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
Marchand, H., L. Zhao, N. Zhang, B. Moran, R. Coffie, UK. Mishra, JS. Speck, SP. DenBaars, and JA. Freitas, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
Katona, TM., MD. Craven, PT. Fini, JS. Speck, and SP. DenBaars, "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates", Applied Physics Letters, vol. 79, no. 18: AIP, pp. 2907–2909, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 353–356, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Observation of Mg-Rich", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 353–356, 2001.
Speck, J. S., P. M. Petroff, and G. E. Beltz, Periodic Lattices of Interacting Self-Assembled Quantum Dots: DTIC Document, 2001.
Acikel, B., Y. Liu, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Phase shifters using (Ba, Sr) TiO/sub 3/thin films on sapphire and glass substrates", Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 2: IEEE, pp. 1191–1194, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
Shapiro, NA., H. Feick, NF. Gardner, WK. Götz, P. Waltereit, JS. Speck, and ER. Weber, "Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 147–151, 2001.
Shapiro, NA., H. Feick, NF. Gardner, WK. Götz, P. Waltereit, JS. Speck, and ER. Weber, "Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 147–151, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
Speck, J. S., "The role of threading dislocations in the physical properties of GaN and its alloys", Materials Science Forum, vol. 353: Trans Tech Publications, pp. 769–778, 2001.
Lee, H., JA. Johnson, MY. He, JS. Speck, and PM. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.

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