Publications

Found 651 results
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2007
Keller, S., NA. Fichtenbaum, C. Schaake, CJ. Neufeld, A. David, E. Matioli, Y. Wu, SP. DenBaars, JS. Speck, C. Weisbuch, et al., "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
Behn, U., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy", physica status solidi (a), vol. 204, no. 1: Wiley Online Library, pp. 299–303, 2007.
Haskell, BA., S. Nakamura, SP. DenBaars, and JS. Speck, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
Feezell, D. F., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE: IEEE, pp. 1–4, 2007.
Nakamura, S., S. P. DenBaars, J. S. Speck, M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, H. Sato, et al., "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth, 2007.
Nakamura, S., and J. S. Speck, Recent Performance of Nonpolar/Semipolar/Polar GaN-based Blue LEDs/LDs and Bulk GaN Crystal Growth, 2007.
Hashimoto, T., M. Saito, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura, "Seeded growth of GaN by the basic ammonothermal method", Journal of crystal growth, vol. 305, no. 2: Elsevier, pp. 311–316, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN", Japanese journal of applied physics, vol. 46, no. 17-19: Japanese journal of applied physics, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 5L: IOP Publishing, pp. L444, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, may # " 22", 2007.
2006
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Baker, T. J., B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on sapphire substrates", Japanese Journal of Applied Physics, vol. 45, no. 2L: IOP Publishing, pp. L154, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Kaeding, J. F., M. Iza, H. Sato, S. DenBaars, J. Speck, and S. Nakamura, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
Waki, I., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Paskova, T., R. Kroeger, PP. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, JS. Speck, and S. Nakamura, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.

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