Publications
Found 700 results
Author Title Type [ Year
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, "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
, "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
, "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
, "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
, "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
, "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm", Electron Devices Meeting (IEDM), 2009 IEEE International: IEEE, pp. 1–3, 2009.
, "Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN", International Quantum Electronics Conference: Optical Society of America, pp. IMH6, 2009.
, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
, "Surface structure and chemical states of a-plane and c-plane InN films", Applied Physics Letters, vol. 95, no. 13: AIP, pp. 132104, 2009.