Publications

Found 522 results
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2019
Kudrawiec, R., L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, and W. Walukiewicz, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
2018
Reparaz, J. S., P. K. da Silva, A. H. Romero, J. Serrano, M. R. Wagner, G. Callsen, S. J. Choi, J. S. Speck, and A. R. Goñi, "Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN", Phys. Rev. B, vol. 98, pp. 165204, Oct, 2018.
Reparaz, J. S., P. K. da Silva, A. H. Romero, J. Serrano, M. R. Wagner, G. Callsen, S. J. Choi, J. S. Speck, and A. R. Goñi, "Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN", Phys. Rev. B, vol. 98, pp. 165204, Oct, 2018.
Neal, A. T., S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, et al., "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.
Bonef, B., R. Cramer, and J. S. Speck, "Erratum:Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 123, no. 1: AIP Publishing, pp. 019901, 2018.
Jiang, R., X. Shen, J. Fang, P. Wang, E. X. Zhang, J. Chen, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
Borgatti, F., JA. Berger, D. Céolin, J. Sky Zhou, J. J. Kas, M. Guzzo, CF. McConville, F. Offi, G. Panaccione, A. Regoutz, et al., "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
Chen, H-H., J. S. Speck, C. Weisbuch, and Y-R. Wu, "Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations", Applied Physics Letters, vol. 113, pp. 153504, 2018.
2017
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Megalini, L., B. Bonef, B. C. Cabinian, H. Zhao, A. Taylor, J. S. Speck, J. E. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates", Applied Physics Letters, vol. 111, no. 3: AIP Publishing, pp. 032105, 2017.
Bonef, B., R. Cramer, F. Wu, and J. S. Speck, "Correlated Transmission Electron Microscopy and Atom Probe Tomography study of Boron distribution in BGaN", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 668–669, 2017.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. E. Cohen, J. S. Speck, and C. Weisbuch, "Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101040L, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, "Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors", Optics express, vol. 25, no. 15: Optical Society of America, pp. 17480–17487, 2017.
Cramer, R. C., B. Bonef, J. English, C. E. Dreyer, C. G. Van de Walle, and J. S. Speck, "Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 35, no. 4: AVS, pp. 041509, 2017.
Bonef, B., R. Cramer, and J. S. Speck, "Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 121, no. 22: AIP Publishing, pp. 225701, 2017.
Forman, C. A., S. Lee, E. C. Young, J. T. Leonard, D. A. Cohen, B. P. Yonkee, T. Margalith, R. M. Farrell, S. P. DenBaars, J. S. Speck, et al., "Nonpolar GaN-based vertical-cavity surface-emitting lasers", Photonics Conference (IPC), 2017 IEEE: IEEE, pp. 233–234, 2017.
Mughal, A. J., B. Carberry, S. Ho Oh, A. Myzaferi, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optoelectronic properties of doped hydrothermal ZnO thin films", physica status solidi (a), vol. 214, no. 6, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
Böer, K. Wolfgang, M. S. Brandt, M. J. Caldas, Z. Cao, P. Deák, D. A. Drabold, A. L. Efros, C. Felser, E. Fortunato, B. Gil, et al., Stefan Hildebrandt, 2017.

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