Publications

Found 333 results
Author Title Type [ Year(Desc)]
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2003
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, XL. Sun, LJ. Brillson, P. Waltereit, and JS. Speck, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Elhamri, S., A. Saxler, WC. Mitchel, R. Berney, C. Elsass, Y. Smorchkova, UK. Mishra, JS. Speck, U. Chowdhury, and RD. Dupuis, "Study of deleterious aging effects in GaN/AlGaN heterostructures", Journal of applied physics, vol. 93, no. 2: AIP, pp. 1079–1082, 2003.
2004
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Gao, Y., MD. Craven, JS. Speck, SP. Den Baars, and EL. Hu, "Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride", Applied physics letters, vol. 84, no. 17: AIP, pp. 3322–3324, 2004.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Erratum: Nonpolar In x Ga 1- x N/G a N (1 1\= 0 0) multiple quantum wells grown on γ- L i A l O 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306 (R)(2003)]", Physical Review B, vol. 69, no. 12: APS, pp. 129902, 2004.
Brown, J., F. Wu, PM. Petroff, and JS. Speck, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.
Andrews, AM., R. LeSar, MA. Kerner, JS. Speck, AE. Romanov, AL. Kolesnikova, M. Bobeth, and W. Pompe, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
Andrews, AM., R. LeSar, MA. Kemer, JS. Speck, AE. Romanov, AL. Koiesnikova, M. Bobeth, and W. Pompe, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.
2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, "Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 86, no. 4: AIP, pp. 041908, 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, "Ga adlayer governed surface defect evolution of (0001) GaN films grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L906, 2005.
López-Richard, V., AM. Alcalde, SJ. Prado, GE. Marques, B. T. Langdon, Y. Paltiel, N. Snapi, A. Zussman, C. Mar Blanca, V. Julius Cemine, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
Akopian, N., G. Bahir, D. Gershoni, MD. Craven, JS. Speck, and SP. DenBaars, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, P. M. Petroff, and JS. Speck, "Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2178–2182, 2005.

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