Publications

Found 215 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is Z  [Clear All Filters]
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
Zaremba, CM., AM. Belcher, M. Fritz, DE. Morse, JS. Speck, PK. Hansma, and GD. Stucky, "ORGANIC-INORGANIC INTERFACES IN THE ULTRASTRUCTURE OF RED ABALONE NACRE", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 209: AMER CHEMICAL SOC PO BOX 57136, WASHINGTON, DC 20037-0136, pp. 584–INOR, 1995.
1996
Zaremba, C. M., A. M. Belcher, M. Fritz, Y. Li, S. Mann, P. K. Hansma, D. E. Morse, J. S. Speck, and G. D. Stucky, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Zhao, L., AT. Chien, FF. Lange, and JS. Speck, "Microstructural development of BaTiO 3 powders synthesized by aqueous methods", Journal of materials research, vol. 11, no. 6: Cambridge University Press, pp. 1325–1328, 1996.
Yao, H., CH. Yan, HA. Jenkinson, JM. Zavada, JS. Speck, and SP. DenBaars, "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry", MRS Online Proceedings Library Archive, vol. 449: Cambridge University Press, 1996.
1997
Zhao, L., AT. Chien, FF. Lange, and JS. Speck, "Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO 3 Thin Films", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
Zinck, JJ., EJ. Tarsa, B. Brar, and JS. Speck, "Desorption behavior of antimony multilayer passivation on GaAs (001)", Journal of applied physics, vol. 82, no. 12: AIP, pp. 6067–6072, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
1999
Rosner, SJ., G. Girolami, H. Marchand, PT. Fini, JP. Ibbetson, L. Zhao, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, PT. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, et al., "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, PT. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, et al., "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
Xuehua, W., JS. Speck, and W. Ziqin, "Growth of High Quality Epitaxial GaN Thin Films", WULI-BEIJING-, vol. 28: UNKNOWN, pp. 44–50, 1999.
Fini, P., L. Zhao, B. Moran, M. Hansen, H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied physics letters, vol. 75, no. 12: AIP, pp. 1706–1708, 1999.
Fini, P., H. Marchand, JP. Ibbetson, B. Moran, L. Zhao, SP. DenBaars, JS. Speck, and UK. Mishra, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.
Fini, P. T., J. P. Ibbetson, H. Marchand, L. Zhao, S. P. DenBaars, and J. S. Speck, "Measurement of crystallographic tilt in the lateral epitaxial overgrowth of GaN", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1044, 1999.
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
Chavarkar, P., L. Zhao, S. Keller, A. Fisher, C. Zheng, JS. Speck, and UK. Mishra, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
Chavarkar, P., L. Zhao, S. Keller, A. Fisher, C. Zheng, JS. Speck, and UK. Mishra, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, SJ. Rosner, G. Girolami, P. T. Fini, JP. Ibbetson, S. Keller, S. DenBaars, et al., "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.

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