Publications

Found 130 results
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2002
HUANG, S-Y., R-H. HORNG, W-K. WANG, T-E. YU, P-R. LIN, D-S. WUU, A. Murai, C. Kruse, K. Samonji, L. McCarthy, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
Okuno, K., Y. Saito, S. Boyama, N. Nakada, S. Nitta, R. George Tohmon, Y. Ushida, N. Shibata, N. A. Fichtenbaum, C. J. Neufeld, et al., "Extended abstracts of the... Conference on Solid State Devices and Materials 2007, 574-575, 2007-09-19", J. Appl. Phys, vol. 92, pp. 5714, 2002.
2001
McCarthy, L., I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, SP. DenBaars, MJW. Rodwell, and UK. Mishra, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
Romanov, AE., GE. Beltz, WT. Fischer, PM. Petroff, and JS. Speck, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "European Materials Research Society(E-MRS)(2001), Spring Meeting, Symposium H: GaN and Related Compounds", Materials Science and Engineering B(Switzerland), no. 1, pp. 245, 2001.
2000
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.
Hansen, M., A. C. Abare, P. Kozodoy, T. M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
Chavarkar, P., UK. Mishra, SK. Mathis, and JS. Speck, "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
1999
Chien, AT., X. Xu, JH. Kim, J. Sachleben, JS. Speck, and FF. Lange, "Electrical characterization of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3330–3339, 1999.
Abare, AC., M. Hansen, JS. Speck, SP. DenBaars, and LA. Coldren, "Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings", Electronics Letters, vol. 35, no. 18: IET, pp. 1559–1560, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
Chichibu, SF., H. Marchand, MS. Minsky, S. Keller, PT. Fini, JP. Ibbetson, SB. Fleischer, JS. Speck, JE. Bowers, E. Hu, et al., "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, PT. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, et al., "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
1998
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Fini, P., X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. Denbaars, and J. S. Speck, "The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 37, pp. 4460, 1998.
Kozodoy, P., JP. Ibbetson, H. Marchand, PT. Fini, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Electrical characterization of GaN pn junctions with and without threading dislocations", Applied physics letters, vol. 73, no. 7: AIP, pp. 975–977, 1998.
1997
Derouin, TA., CDE. Lakeman, XH. Wu, JS. Speck, and FF. Lange, "Effect of lattice mismatch on the epitaxy of sol-gel LiNbO 3 thin films", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1391–1400, 1997.
Schlom, DG., CB. Eom, ME. Hawley, CM. Foster, and JS. Speck, Epitaxial oxide thin films 3. Materials Research Society symposium proceedings Volume 474: Materials Research Society, Warrendale, PA (US), 1997.
Eom, C-B., C. Foster, ME. Hawley, D. Schlom, and JS. Speck, Epitaxial Oxide Thin Films III, vol. 474: Materials Research Society, 1997.
1996
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.

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