Publications

Found 12 results
Author Title Type [ Year(Desc)]
Filters: Author is Hommel, D  [Clear All Filters]
2001
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
2003
Roder, C., H. Heinke, D. Hommel, TM. Katona, JS. Speck, and SP. DenBaars, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
2006
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Barabash, RI., G. E. Ice, W. Liu, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1508–1513, 2006.
Paskova, T., R. Kroeger, PP. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, JS. Speck, and S. Nakamura, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
Paskov, PP., T. Paskova, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
2007
Darakchieva, V., T. Paskova, M. Schubert, H. Arwin, PP. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, et al., "Anisotropic strain and phonon deformation potentials in GaN", Physical Review B, vol. 75, no. 19: APS, pp. 195217, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Edgar, JH, see Lu, P. 300 (2007) 336 Edwards, PR, see Rizzi, F. 300 (2007) 254 Egawa, S., see Honda, T. 300 (2007) 90 El Jani, B., see Fitouri, H. 300 (2007) 347 Epelbaum, BM, see Bickermann, M. 300 (2007) 299", Journal of Crystal Growth, vol. 300, pp. 555–561, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers", Journal of crystal growth, vol. 300, no. 1: Elsevier, pp. 233–238, 2007.
Kröger, R., T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.