Publications

Found 23 results
Author Title Type [ Year(Desc)]
Filters: Author is Cohen, Daniel A  [Clear All Filters]
2007
Feezell, D. F., M. C. Schmidt, R. M. Farrell, K-C. Kim, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
Farrell, R. M., D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, et al., "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
Schmidt, M. C., K-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
2008
Tyagi, A., Y-. Da Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091103, 2008.
2009
Tyagi, A., R. M. Farrell, K. M. Kelchner, C-Y. Huang, P. Shan Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
2011
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Chung, R. B., E. C. Young, D. A. Haeger, S. P. DenBaars, J. S. Speck, and D. A. Cohen, "Semipolar AlN on bulk GaN for UV-C diode lasers", Quantum Electronics and Laser Science Conference: Optical Society of America, pp. JTuB2, 2011.
2012
Haeger, D., E. Young, R. Chung, F. Wu, S. Nakamura, S. DenBaars, J. S. Speck, A. Romanov, and D. A. Cohen, "384nm AlGaN Diode Lasers on Relaxed Semipolar Buffers", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–4, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Young, E. C., F. Wu, A. E. Romanov, D. A. Haeger, S. Nakamura, S. P. DenBaars, D. A. Cohen, and J. S. Speck, "Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission", Applied Physics Letters, vol. 101, no. 14: AIP, pp. 142109, 2012.
2013
Hardy, M. T., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
2015
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Speck, J. S., and D. A. Cohen, "Prospects for high power nonpolar and semipolar GaN-based laser diodes", High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE: IEEE, pp. 1–2, 2015.
Megalini, L., L. Y. Kuritzky, J. T. Leonard, R. Shenoy, K. Rose, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 066502, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
2016
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 235205, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Lee, S., S. Mishkat-Ul-Masabih, J. T. Leonard, D. F. Feezell, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser", Applied Physics Express, vol. 10, no. 1: IOP Publishing, pp. 011001, 2016.
2017
Forman, C. A., S. Lee, E. C. Young, J. T. Leonard, D. A. Cohen, B. P. Yonkee, T. Margalith, R. M. Farrell, S. P. DenBaars, J. S. Speck, et al., "Nonpolar GaN-based vertical-cavity surface-emitting lasers", Photonics Conference (IPC), 2017 IEEE: IEEE, pp. 233–234, 2017.