Publications

Found 61 results
Author Title Type [ Year(Desc)]
Filters: Author is Farrell, Robert M  [Clear All Filters]
2005
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
2007
Feezell, D. F., M. C. Schmidt, R. M. Farrell, K-C. Kim, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
Farrell, R. M., D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, et al., "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
Schmidt, M. C., K-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
2009
Tyagi, A., R. M. Farrell, K. M. Kelchner, C-Y. Huang, P. Shan Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
Da Lin, Y-., M. T. Hardy, P. Shan Hsu, K. M. Kelchner, C-Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, et al., "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
Hsu, P. Shan, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, et al., "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Matioli, E., C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, et al., "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
2012
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Hu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, et al., "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
Iza, M., C. J. Neufeld, S. C. Cruz, R. M. Farrell, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Textured iii-v semiconductor, may # " 3", 2012.

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