Publications

Found 63 results
Author Title Type [ Year(Desc)]
Filters: Author is Speck, James  [Clear All Filters]
2014
Shen, C., T. Khee Ng, B. Janjua, A. Alyamani, M. M. El-Desouki, J. Speck, S. DenBaars, and B. Ooi, "Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate", Asia Communications and Photonics Conference: Optical Society of America, pp. AW4A–1, 2014.
2015
Kuritzky, L., D. Myers, K. Kelchner, S. Nakamura, S. DenBaars, C. Weisbuch, and J. Speck, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
Galiano, K., D. Gleason, P. Krishna Paul, Z. Zhang, D. Cardwell, B. McSkimming, J. Speck, A. Arehart, S. Ringel, and J. Pelz, "Spatial Localization and Variation in Defect-Related Electron Traps in GaN Materials", Bulletin of the American Physical Society: APS, 2015.
Speck, J., "Unraveling the Efficiency Limits of GaN-Based Emitters and the Surprising Connection to Electron Devices", Meeting Abstracts, no. 23: The Electrochemical Society, pp. 1449–1449, 2015.
2016
Speck, J., "Development of β-Ga2O3 Materials", Meeting Abstracts, no. 24: The Electrochemical Society, pp. 1244–1244, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Speck, J., "Point and Extended Defects in GaN-based Materials", APS March Meeting Abstracts, 2016.
Kowsz, S., C. Pynn, R. Farrell, J. Speck, S. DenBaars, and S. Nakamura, "Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
2017
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
2022
Korlacki, R\l., M. Hilfiker, J. Knudtson, M. Stokey, U. Kilic, A. Mauze, Y. Zhang, J. Speck, V. Darakchieva, and M. Schubert, "Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)", Phys. Rev. Appl., vol. 18, pp. 064019, Dec, 2022.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.

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