Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James and First Letter Of Title is D  [Clear All Filters]
2016
Speck, J., "Development of β-Ga2O3 Materials", Meeting Abstracts, no. 24: The Electrochemical Society, pp. 1244–1244, 2016.
2012
Jewell, J., D. Simeonov, S-C. Huang, Y-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, "Double embedded photonic crystals for extraction of guided light in light-emitting diodes", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171105, 2012.
2011
Zhang, Z., C. Hurni, A. Arehart, J. Speck, and S. Ringel, "Deep Traps in M-Plane GaN Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Sasikumar, A., A. Arehart, S. Kaun, M. Hoi Wong, J. Speck, U. Mishra, and S. Ringe, "Direct Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
1996
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.