Publications

Found 12 results
Author Title Type [ Year(Asc)]
Filters: Author is Chichibu, SF  [Clear All Filters]
2009
Speck, JS., and SF. Chichibu, "Nonpolar and semipolar group III nitride-based materials", MRS bulletin, vol. 34, no. 5: Cambridge University Press, pp. 304–312, 2009.
2007
Chichibu, SF., T. Onuma, T. Hashimoto, K. Fujito, F. Wu, JS. Speck, and S. Nakamura, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
2006
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Onuma, T., S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
2005
Chichibu, SF., A. Uedono, T. Onuma, T. Sota, BA. Haskell, SP. DenBaars, JS. Speck, and S. Nakamura, "Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques", Applied Physics Letters, vol. 86, no. 2: AIP, pp. 021914, 2005.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
2004
Koida, T., SF. Chichibu, T. Sota, MD. Craven, BA. Haskell, JS. Speck, SP. DenBaars, and S. Nakamura, "Improved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 84, no. 19: AIP, pp. 3768–3770, 2004.
2003
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
1999
Chichibu, SF., H. Marchand, MS. Minsky, S. Keller, PT. Fini, JP. Ibbetson, SB. Fleischer, JS. Speck, JE. Bowers, E. Hu, et al., "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
Chichibu, SF., AC. Abare, MP. Mack, MS. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, SB. Fleischer, S. Keller, JS. Speck, et al., "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.