Publications
Found 2 results
Author Title Type [ Year
Filters: Author is Shen, L and First Letter Of Title is E [Clear All Filters]
"Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
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