Publications

Found 30 results
Author Title Type [ Year(Asc)]
Filters: Author is Ibbetson, JP  [Clear All Filters]
1998
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
1993
Ibbetson, JP., JS. Speck, AC. Gossard, and UK. Mishra, "Observation of arsenic precipitates in GaInAs grown at low temperature on InP", Applied physics letters, vol. 62, no. 18: AIP, pp. 2209–2211, 1993.
Ibbetson, JP., JS. Speck, AC. Gossard, and UK. Mishra, "Observation of impurity effects on the nucleation of arsenic precipitates in GaAs", Applied physics letters, vol. 62, no. 2: AIP, pp. 169–171, 1993.
Ibbetson, JP., JS. Speck, NX. Nguyen, AC. Gossard, and UK. Mishra, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.

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