Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Fini, P and First Letter Of Title is D  [Clear All Filters]
2000
Fini, P., H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", Journal of crystal growth, vol. 209, no. 4: Elsevier, pp. 581–590, 2000.
1999
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
1998
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.