Publications

Found 12 results
Author Title Type [ Year(Desc)]
Filters: Author is Petroff, PM  [Clear All Filters]
1998
Wu, XH., CR. Elsass, A. Abare, M. Mack, S. Keller, PM. Petroff, SP. DenBaars, JS. Speck, and SJ. Rosner, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
1999
Elsass, CR., IP. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, JP. Ibbetson, S. Keller, PM. Petroff, SP. DenBaars, et al., "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
Romanov, AE., PM. Petroff, and JS. Speck, "Lateral ordering of quantum dots by periodic subsurface stressors", Applied physics letters, vol. 74, no. 16: AIP, pp. 2280–2282, 1999.
2000
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
Petroff, PM., W. Schoenfeld, C. Metzner, B. Gerardot, H. Lee, J. Johnson, and J. Speck, "Self-assembled quantum dot lattices and spectroscopy of single quantum dot molecules.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 220: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U233–U233, 2000.
2001
Romanov, AE., GE. Beltz, WT. Fischer, PM. Petroff, and JS. Speck, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Lee, H., JA. Johnson, MY. He, JS. Speck, and PM. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.
2002
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
2004
Brown, J., F. Wu, PM. Petroff, and JS. Speck, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.