Publications
] , "Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations", Journal of applied physics, vol. 78, no. 3: AIP, pp. 1696–1706, 1995.
, "An approach to threading dislocation ëëreaction kineticsíí", Applied physics letters, vol. 69, no. 22: AIP, pp. 3342–3344, 1996.
, "Modeling of threading dislocation density reduction in heteroepitaxial layers I. Geometry and crystallography", physica status solidi (b), vol. 198, no. 2: WILEY-VCH Verlag, pp. 599–613, 1996.
, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of applied physics, vol. 80, no. 7: AIP, pp. 3808–3816, 1996.
, "Theory of microstructure and mechanics of the... a 1/a 2/a 1/a 2... domain pattern in epitaxial ferroelectric and ferroelastic films", Journal of applied physics, vol. 79, no. 8: AIP, pp. 4037–4049, 1996.
, "Computer simulation of threading dislocation density reduction in heteroepitaxial layers", Philosophical Magazine A, vol. 76, no. 4: Taylor & Francis, pp. 807–835, 1997.
, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
, "Domain pattern formation in epitaxial ferroelectric films", Integrated Ferroelectrics, vol. 20, no. 1-4: Taylor & Francis, pp. 67–68, 1998.
, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.
, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
, "Domain patterns in (111) oriented tetragonal ferroelectric films", physica status solidi (a), vol. 172, no. 1: WILEY-VCH Verlag Berlin, pp. 225–253, 1999.
, "Lateral ordering of quantum dots by periodic subsurface stressors", Applied physics letters, vol. 74, no. 16: AIP, pp. 2280–2282, 1999.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of Applied Physics, vol. 86, no. 9: New York, NY: American Institute of Physics, c1937-, pp. 4836–4842, 1999.
, "Threading dislocation reduction in strained layers", Journal of applied physics, vol. 85, no. 1: AIP, pp. 182–192, 1999.
, "Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of applied physics, vol. 86, no. 9: AIP, pp. 4836–4842, 1999.
, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
, "Relaxation enhancing interlayers (REIs) in threading dislocation reduction", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 901–905, 2000.
, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
, "Electronic properties of GaN induced by a subsurface stressor", Applied physics letters, vol. 81, no. 25: AIP, pp. 4754–4756, 2002.
, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.