Publications

Found 35 results
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2017
Yonkee, B. P., E. C. Young, S. P. DenBaars, J. S. Speck, and S. Nakamura, "High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015015, 2017.
Kuritzky, L. Y., A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch, and J. S. Speck, "High wall-plug efficiency blue III-nitride LEDs designed for low current density operation", Optics express, vol. 25, no. 24: Optical Society of America, pp. 30696–30707, 2017.
2016
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Cantore, M., N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High luminous flux from single crystal phosphor-converted laser-based white lighting system", Optics Express, vol. 24, no. 2: Optical Society of America, pp. A215–A221, 2016.
Pourhashemi, A., R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, High power blue-violet III-nitride semipolar laser diodes, may # " 31", 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High-speed performance of III-nitride 410 nm ridge laser diode on (202Ø1Ø) plane for visible light communication", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–2, 2016.
Yonkee, B. P., E. C. Young, J. T. Leonard, C. Lee, S. Ho Oh, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Young, E. C., B. P. Yonkee, F. Wu, S. Ho Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Hybrid tunnel junction contacts to III–nitride light-emitting diodes", Applied Physics Express, vol. 9, no. 2: IOP Publishing, pp. 022102, 2016.
2015
Zhong, H., A. Tyagi, K. J. Vampola, J. S. Speck, S. P. DenBaars, and S. Nakamura, High light extraction efficiency nitride based light emitting diode by surface roughening, 2015.
2014
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
2013
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, C-C. Pan, and S. Tanaka, High output power, high efficiency blue light-emitting diodes, nov # " 14", 2013.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region, apr # " 25", 2013.
2012
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Speck, J. S., S. P. DenBaars, U. K. Mishra, and S. Nakamura, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
2011
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
2010
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.

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