Publications

Found 673 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S  [Clear All Filters]
2012
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
Speck, J. S., "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", Meeting Abstracts, no. 43: The Electrochemical Society, pp. 3202–3202, 2012.
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Speck, J. S., S. P. DenBaars, U. K. Mishra, and S. Nakamura, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
Browne, D. A., E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
Wu, Y-R., C-P. Wang, K-C. Wang, and J. S. Speck, "Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs", CLEO: Applications and Technology: Optical Society of America, pp. JTh2A–72, 2012.
D'evelyn, M. P., and J. S. Speck, Large Area Nitride Crystal and Method for Making It, 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Speck, J. S., C. C. A. Weisbuch, and E. de Nazaret Matioli, Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices, jan # " 26", 2012.
Huang, C-Y., S. Nakamura, S. P. DenBaars, and J. S. Speck, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.
Chung, R. B., H. Tse Chen, C-C. Pan, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for fabrication of (al, in, ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode, jun # " 7", 2012.
Sato, H., H. Hirasawa, R. B. Chung, S. P. DenBaars, J. S. Speck, and S. Nakamura, Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes, 2012.
Chung, R. B., C. Han, S. P. DenBaars, J. S. Speck, and S. Nakamura, METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
Bierwagen, O., and J. S. Speck, "Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102107, 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. S. Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
Matioli, E. de Nazaret, C. C. A. Weisbuch, J. S. Speck, and E. L. Hu, Optoelectronic devices with embedded void structures, 2012.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.

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