Publications

Found 7 results
Author Title Type [ Year(Desc)]
Filters: Author is Speck, James S and First Letter Of Title is U  [Clear All Filters]
2010
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
2013
Pimputkar, S., P. M. Von Dollen, J. S. Speck, and S. Nakamura, Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method, apr # " 25", 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals, 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2015
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
2017
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.