Publications

Found 56 results
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Filters: Author is Speck, James S and First Letter Of Title is E  [Clear All Filters]
2018
Bonef, B., R. Cramer, and J. S. Speck, "Erratum:Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 123, no. 1: AIP Publishing, pp. 019901, 2018.
Hahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, et al., "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
2017
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. E. Cohen, J. S. Speck, and C. Weisbuch, "Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101040L, 2017.
2016
Tsai, M-Y., O. Bierwagen, and J. S. Speck, "Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes", Thin Solid Films, vol. 605: Elsevier, pp. 186–192, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Erratum: Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93, 045203 (2016)]", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 239905, 2016.
2015
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
Kuritzky, L. Y., D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
Browne, D. A., B. Mazumder, Y-R. Wu, and J. S. Speck, "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy", Journal of Applied Physics, vol. 117, no. 18: AIP Publishing, pp. 185703, 2015.
2014
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Von Dollen, P., S. Pimputkar, and J. S. Speck, "Es werde Licht–mit Galliumnitrid: der Nobelpreis für Physik 2014", Angewandte Chemie, vol. 126, no. 51: Wiley Online Library, pp. 14198–14200, 2014.
Woodward, N., R. Enck, C. S. Gallinat, L. E. Rodak, G. D. Metcalfe, J. S. Speck, H. Shen, and M. Wraback, "Evidence of lateral electric fields in c-plane III-V nitrides via terahertz emission", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 686–689, 2014.
2013
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films", Physical Review B, vol. 88, no. 8: APS, pp. 085305, 2013.
Kelchner, K. M., L. Y. Kuritzky, K. Fujito, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates", Journal of Crystal Growth, vol. 382: Elsevier, pp. 80–86, 2013.
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
2012
Kaun, S. W., P. G. Burke, M. Hoi Wong, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 26: AIP, pp. 262102, 2012.
Keller, S., J. Lu, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
Hurni, C. A., J. R. Lang, P. G. Burke, and J. S. Speck, "Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102106, 2012.
Metcalfe, G. D., C. S. Gallinat, H. Shen, M. Wraback, S. Wienecke, E. C. Young, and J. S. Speck, "Effects of strain relaxation on the photoluminescence of semipolar InGaN", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Bierwagen, O., T. Nagata, M. E. White, M-Y. Tsai, and J. S. Speck, "Electron transport in semiconducting SnO 2: Intentional bulk donors and acceptors, the interface, and the surface", Journal of Materials Research, vol. 27, no. 17: Cambridge University Press, pp. 2232–2236, 2012.
Bierwagen, I., T. Nagata, M. E. White, M-Y. Tsai, and J. S. Speck, "Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface–CORRIGENDUM", Journal of Materials Research, vol. 27, no. 19: Cambridge University Press, pp. 2578–2578, 2012.
Masui, H., H. Yamada, K. Iso, A. Hirai, M. Saito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut, 2012.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2012.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.

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