Publications
] , "Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied physics letters, vol. 73, no. 6: AIP, pp. 747–749, 1998.
, "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied physics letters, vol. 73, no. 21: AIP, pp. 3090–3092, 1998.
, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
, "Substrate reactivity and" controlled contamination" in MOCVD grown gallium nitride on sapphire.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 216: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U188–U188, 1998.
, "Computer simulation of threading dislocation density reduction in heteroepitaxial layers", Philosophical Magazine A, vol. 76, no. 4: Taylor & Francis, pp. 807–835, 1997.
, "Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO 3 Thin Films", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
, "Desorption behavior of antimony multilayer passivation on GaAs (001)", Journal of applied physics, vol. 82, no. 12: AIP, pp. 6067–6072, 1997.
, "Effect of lattice mismatch on the epitaxy of sol-gel LiNbO 3 thin films", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1391–1400, 1997.
, Epitaxial oxide thin films 3. Materials Research Society symposium proceedings Volume 474: Materials Research Society, Warrendale, PA (US), 1997.
, Epitaxial Oxide Thin Films III, vol. 474: Materials Research Society, 1997.
, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
, "Hydrothermal synthesis of heteroepitaxial Pb (Zr x Ti 1- x) O 3 thin films at 90–150∞ C", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1176–1178, 1997.
, "HYDROTHERMAL SYNTHESIS OF Pb (Zrx, Ti 1-x) O 3 POWDERS AND HETEROEPITAXIAL THIN FILMS", Ceram. Trans, vol. 83, pp. 329, 1997.
, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
, "Mosaic structure in epitaxial thin films having large lattice mismatch", Journal of applied physics, vol. 82, no. 9: AIP, pp. 4286–4295, 1997.
, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
, "An approach to threading dislocation ëëreaction kineticsíí", Applied physics letters, vol. 69, no. 22: AIP, pp. 3342–3344, 1996.
, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.