Publications

Found 496 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, JS  [Clear All Filters]
1999
Mathis, SK., XH. Wu, AE. Romanov, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of Applied Physics, vol. 86, no. 9: New York, NY: American Institute of Physics, c1937-, pp. 4836–4842, 1999.
Fini, P., L. Zhao, B. Moran, M. Hansen, H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied Physics Letters, vol. 75, no. 12: New York [etc.] American Institute of Physics., pp. 1706–1708, 1999.
Munkholm, A., GB. Stephenson, JA. Eastman, C. Thompson, P. Fini, JS. Speck, O. Auciello, PH. Fuoss, and SP. DenBaars, "Surface structure of GaN (0001) in the chemical vapor deposition environment", Physical review letters, vol. 83, no. 4: APS, pp. 741, 1999.
Chien, AT., J. Sachleben, JH. Kim, JS. Speck, and FF. Lange, "Synthesis and characterization of PbTiO 3 powders and heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3303–3311, 1999.
Romanov, AE., W. Pompe, S. Mathis, GE. Beltz, and JS. Speck, "Threading dislocation reduction in strained layers", Journal of applied physics, vol. 85, no. 1: AIP, pp. 182–192, 1999.
Mathis, SK., X-H. Wu, AE. Romanov, and JS. Speck, "Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of applied physics, vol. 86, no. 9: AIP, pp. 4836–4842, 1999.
1998
Marchand, H., JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. DenBaars, JS. Speck, and UK. Mishra, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.
DenBaars, SP., AC. Abare, MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, et al., "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
Abare, AC., MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, LA. Coldren, et al., "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
Marchand, H., XH. Wu, JP. Ibbetson, PT. Fini, P. Kozodoy, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 73, no. 6: New York [etc.] American Institute of Physics., pp. 747–749, 1998.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Speck, JS., W. Pomp, AE. Romanov, and CM. Foster, "Domain pattern formation in epitaxial ferroelectric films", Integrated Ferroelectrics, vol. 20, no. 1-4: Taylor & Francis, pp. 67–68, 1998.
Romanov, AE., MJ. Lefevre, JS. Speck, W. Pompe, SK. Streiffer, and CM. Foster, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.
Streiffer, SK., CB. Parker, AE. Romanov, MJ. Lefevre, L. Zhao, JS. Speck, W. Pompe, CM. Foster, and GR. Bai, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Kozodoy, P., JP. Ibbetson, H. Marchand, PT. Fini, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Electrical characterization of GaN pn junctions with and without threading dislocations", Applied physics letters, vol. 73, no. 7: AIP, pp. 975–977, 1998.
Marchand, H., JP. Ibbetson, PT. Fini, XH. Wu, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process", MRS Online Proceedings Library Archive, vol. 537: Cambridge University Press, 1998.
Mack, MP., GD. Via, AC. Abare, M. Hansen, PK. Kozodoy, S. Keller, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, "Improvement of GaN-based laser diode facets by FIB polishing", Electronics Letters, vol. 34, no. 13: IET, pp. 1315–1316, 1998.
Abare, AC., MP. Mack, M. Hansen, JS. Speck, LA. Coldren, SP. DenBaars, GA. Meyer, SL. Lehew, and GA. Cooper, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
Marchand, H., JP. Ibbetson, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 195, no. 1-4: North-Holland, pp. 328–332, 1998.
Chien, AT., L. Zhao, M. Colic, JS. Speck, and FF. Lange, "Microstructural development of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 13, no. 3: Cambridge University Press, pp. 649–659, 1998.
Speck, JS., H. Marchand, P. Kozodoy, PT. Fini, XH. Wu, JP. Ibbetson, S. Keller, SP. DenBaars, UK. Mishra, and SJ. Rosner, "Microstructure and Electronic Properties of GaN Laterally Overgrown by Metal Organic Chemical Vapor Deposition", Blue Laser and Light Emitting Diodes II: Ohmsha, pp. 37, 1998.

Pages