Publications
Found 43 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is S [Clear All Filters]
, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "Strain relaxation of InGaAs by lateral oxidation of AlAs", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2066–2071, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: New York, NY: American Institute of Physics, c1937-, pp. 1855–1860, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: New York [etc.] American Institute of Physics., pp. 845–847, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of Applied Physics, vol. 86, no. 9: New York, NY: American Institute of Physics, c1937-, pp. 4836–4842, 1999.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied Physics Letters, vol. 75, no. 12: New York [etc.] American Institute of Physics., pp. 1706–1708, 1999.
, "Surface structure of GaN (0001) in the chemical vapor deposition environment", Physical review letters, vol. 83, no. 4: APS, pp. 741, 1999.
, "Synthesis and characterization of PbTiO 3 powders and heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3303–3311, 1999.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
, "Substrate reactivity and" controlled contamination" in MOCVD grown gallium nitride on sapphire.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 216: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U188–U188, 1998.
, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of applied physics, vol. 80, no. 7: AIP, pp. 3808–3816, 1996.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.