Publications

Found 23 results
Author Title Type [ Year(Desc)]
Filters: Author is Speck, JS and First Letter Of Title is G  [Clear All Filters]
1992
Williams, KE., EJ. Tarsa, and JS. Speck, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.
1993
Tarsa, EJ., M. De Graef, DR. Clarke, AC. Gossard, and JS. Speck, "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs", Journal of applied physics, vol. 73, no. 7: AIP, pp. 3276–3283, 1993.
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
1996
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.
1999
Xuehua, W., JS. Speck, and W. Ziqin, "Growth of High Quality Epitaxial GaN Thin Films", WULI-BEIJING-, vol. 28: UNKNOWN, pp. 44–50, 1999.
2000
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JS. Speck, AC. Gossard, and DD. Awschalom, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
Moran, B., M. Hansen, MD. Craven, JS. Speck, and SP. DenBaars, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
2002
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JM. Stephens, JS. Speck, AC. Gossard, and DD. Awschalom, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
2003
Katona, TM., T. Margalith, C. Moe, MC. Schmidt, S. Nakamura, JS. Speck, and SP. DenBaars, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
2004
McLaurin, M., B. Haskell, S. Nakamura, and JS. Speck, "Gallium adsorption onto (1120) gallium nitride surfaces", Journal of applied physics, vol. 96, no. 1: AIP, pp. 327–334, 2004.
Brown, J., F. Wu, PM. Petroff, and JS. Speck, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.
2005
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
2006
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
McLaurin, M., TE. Mates, F. Wu, and JS. Speck, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.
2007
Keller, S., NA. Fichtenbaum, M. Furukawa, JS. Speck, SP. DenBaars, and UK. Mishra, "Growth and characterization of N-polar In Ga N/ Ga N multiquantum wells", Applied physics letters, vol. 90, no. 19: AIP, pp. 191908, 2007.
Gallinat, CS., G. Koblmüller, JS. Brown, and JS. Speck, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN", Journal of Applied Physics, vol. 102, no. 6: AIP, pp. 064907, 2007.
2009
Scarpulla, M. A., CS. Gallinat, S. Mack, JS. Speck, and AC. Gossard, "GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy", Journal of Crystal Growth, vol. 311, no. 5: North-Holland, pp. 1239–1244, 2009.
Dasgupta, S., F. Wu, JS. Speck, and UK. Mishra, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
2012
Kelchner, KM., SP. DenBaars, and JS. Speck, "GaN Laser Diodes on Nonpolar and Semipolar Planes", Semiconductors and Semimetals, vol. 86: Elsevier, pp. 149–182, 2012.
Corrion, AL., F. Wu, and JS. Speck, "Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 112, no. 5: AIP, pp. 054903, 2012.
2016
Young, NG., RM. Farrell, M. Iza, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.