Publications
"Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
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