Publications
Found 5 results
Author Title Type [ Year
Filters: Author is Keller, S and First Letter Of Title is N [Clear All Filters]
"N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 269–270, 2011.
, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
, "Near Field Spectroscopy of InGaN Single and Multiple Quantum Well Structures", APS March Meeting Abstracts, 1998.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
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