Publications

Found 7 results
Author Title Type [ Year(Desc)]
Filters: Author is Tak, T.  [Clear All Filters]
2025
Yapparov, R., A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, J. S. Speck, and others, "Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs", Applied Physics Letters, vol. 126, 2025.
Wang, M., W. Gong, F. Wu, T. Tak, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer", Optics Express, vol. 33, pp. 19391–19398, 2025.
Yapparov, R., M. S. Wong, T. Tak, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy", Applied Physics Letters, vol. 126, 2025.
Wong, M. S., T. Tak, A. Y. Ni, K. Nitta, S. Gandrothula, J. K. Kim, N. G. Cha, and others, "Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes", Applied Physics Letters, vol. 126, 2025.
Tak, T., T. Y. Tsai, W. Y. Ho, Y. C. Chow, J. Peretti, Y. R. Wu, C. Weisbuch, and others, "Role of the junction voltage on the overflow current in light-emitting diodes", Physical Review Applied, vol. 24, pp. 064025, 2025.
Tak, T., W. Y. Ho, I. Celupica-Liu, Y. C. Chow, J. Peretti, C. Weisbuch, and J. S. Speck, "Trap-assisted Auger–Meitner recombination in GaN p-i-n diodes", Physical Review B, vol. 111, pp. 155308, 2025.
Tak, T., Y. C. Chow, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes", Physical Review Applied, vol. 23, pp. 034002, 2025.