Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Rinat Yapparov  [Clear All Filters]
2024
Yapparov, R., T. Tak, J. Ewing, F. Wu, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
Marcinkevičius, S., T. Tak, Y. Chao Chow, F. Wu, R. Yapparov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
2023
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
2022
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
2020
Yapparov, R., C. Lynsky, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination", Applied Physics Express, vol. 13, pp. 122005, nov, 2020.