Publications
"Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
, "InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to 1.3 μm/hr", 2019 Compound Semiconductor Week (CSW), May, 2019.
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