Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Weisbuch, C.  [Clear All Filters]
2023
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
2022
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 121, 11, 2022.
2021
Chow, Y. C., C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
2018
Hahn, W., J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, et al., "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy", Phys. Rev. B, vol. 98, pp. 045305, Jul, 2018.