Publications

Found 1 results
Author Title Type [ Year(Asc)]
Filters: Author is X. Shen and Keyword is worst-case stressing bias condition  [Clear All Filters]
2018
Jiang, R., X. Shen, J. Fang, P. Wang, E. X. Zhang, J. Chen, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.