Publications

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Filters: Author is D. J. Denninghoff and Keyword is high electron mobility transistors  [Clear All Filters]
2011
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.