Publications
Found 2 results
Author Title Type [ Year
] Filters: Author is Fleetwood, DM and First Letter Of Title is P [Clear All Filters]
, "Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors", MRS Online Proceedings Library Archive, vol. 1792: Cambridge University Press, 2015.
, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.