Publications

Found 3 results
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2006
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
2001
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.