Publications

Found 4 results
Author Title Type [ Year(Desc)]
Filters: Author is Higashiwaki, Masataka  [Clear All Filters]
2009
Fujiwara, T., S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
Fujiwara, T., S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
2014
Okumura, H., M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, "Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 7, no. 9: IOP Publishing, pp. 095501, 2014.
2022
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.