Publications
Found 3 results
Author Title Type [ Year
Filters: Author is Lu, Jing and First Letter Of Title is E [Clear All Filters]
"Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
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