Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Metcalfe, GD  [Clear All Filters]
2009
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
2008
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.