Publications

Found 8 results
Author Title Type [ Year(Desc)]
Filters: Author is Shivaraman, Ravi  [Clear All Filters]
2011
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
2012
Wu, Y-R., R. Shivaraman, K-C. Wang, and J. S. Speck, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Shivaraman, R., Y. Kawaguchi, S. Tanaka, SP. DenBaars, S. Nakamura, and JS. Speck, "Comparative analysis of 20 2\= 1 and 20 2\= 1\= semipolar GaN light emitting diodes using atom probe tomography", Applied Physics Letters, vol. 102, no. 25: AIP, pp. 251104, 2013.
2014
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Yang, T-J., R. Shivaraman, J. S. Speck, and Y-R. Wu, "The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior", Journal of Applied Physics, vol. 116, no. 11: AIP Publishing, pp. 113104, 2014.