Publications

Found 33 results
Author Title Type [ Year(Desc)]
Filters: Author is Speck, J  [Clear All Filters]
2010
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
2011
Simeonov, D., MY. Tsai, HT. Chen, C. Weisbuch, and J. Speck, "Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices", Electronics Letters, vol. 47, no. 9: IET, pp. 556–558, 2011.
Denninghoff, DJ., S. Dasgupta, DF. Brown, S. Keller, J. Speck, and UK. Mishra, "N-polar GaN HEMTs with f max> 300 GHz using high-aspect-ratio T-gate design", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 269–270, 2011.
2014
Iveland, J., J. Speck, L. Martinelli, J. Peretti, and C. Weisbuch, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "MS94. O06", Acta Cryst, vol. 70, pp. C1416, 2014.
2017
Rigutti, L., B. Bonef, J. Speck, F. Tang, and RA. Oliver, "Atom probe tomography of nitride semiconductors", Scripta Materialia: Pergamon, 2017.
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.

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