Publications

Found 13 results
Author Title Type [ Year(Desc)]
Filters: Author is Eastman, JA  [Clear All Filters]
1998
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
1999
Stephenson, GB., JA. Eastman, O. Auciello, A. Munkholm, C. Thompson, PH. Fuoss, P. Fini, SP. DenBaars, and JS. Speck, "IN SITU SYNCHROTRON RADIATION RESEARCH IN MATERIALS SCIENCE-Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN", MRS Bulletin-Materials Research Society, vol. 24, no. 1: [Pittsburgh, PA]: The Society, pp. 21–25, 1999.
Stephenson, GB., JA. Eastman, C. Thompson, O. Auciello, LJ. Thompson, A. Munkholm, P. Fini, SP. DenBaars, and JS. Speck, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
Munkholm, A., GB. Stephenson, JA. Eastman, C. Thompson, P. Fini, JS. Speck, O. Auciello, PH. Fuoss, and SP. DenBaars, "Surface structure of GaN (0001) in the chemical vapor deposition environment", Physical review letters, vol. 83, no. 4: APS, pp. 741, 1999.
2000
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Murty, MV. Ramana, P. Fini, GB. Stephenson, C. Thompson, JA. Eastman, A. Munkholm, O. Auciello, R. Jothilingam, SP. DenBaars, and JS. Speck, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
2001
Thompson, C., GB. Stephenson, JA. Eastman, A. Munkholm, O. Auciello, MV. Ramana Murty, P. Fini, SP. DenBaars, and JS. Speck, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.