Publications

Found 2 results
Author Title Type [ Year(Desc)]
Filters: Author is Shan Hsu, Po and First Letter Of Title is S  [Clear All Filters]
2012
Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.