Publications
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Filters: Author is Dasgupta, Sansaptak and First Letter Of Title is T [Clear All Filters]
"T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
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